ChangXin Memory Technologies (CXMT) Unveils Next-Gen DRAM Chips, Posing a Challenge to Samsung & Micron
Chinese memory chipmaker ChangXin Memory Technologies (CXMT) has reached a significant milestone in China’s journey towards semiconductor self-sufficiency. The company has officially announced the mass production of its fifth-generation DRAM technology platform, known as the G5 platform.
The announcement was made at the 2026 World Manufacturing Convention in Hefei, Anhui Province on September 20. At the event, CXMT unveiled two new 24Gb LPDDR5X memory products built on the G5 platform. These products, one in a 496-ball package and another in a 245-ball package, are both aimed at mid- to high-end smartphones and portable consumer electronics.
The new chips represent a 50% increase in memory capacity compared to the company’s previous generation. They also offer improved energy efficiency and lower production costs.
Notably, CXMT achieved an 11.95-nanometer memory-array half-pitch using a quadruple-patterning process. This was accomplished without access to ASML’s EUV lithography machines, which are currently blocked by U.S. export controls. The G5 platform also produces at least 50% more chips per silicon wafer than CXMT’s previous generation.
With a global DRAM market share now at 10%, CXMT is the first significant fourth competitor to challenge the long-standing dominance of Samsung Electronics, SK Hynix, and Micron Technology. These three companies previously held over 90% of the market.
Source: Eastern Herald — CXMT’s G5 DRAM Platform Enters Mass Production (September 20, 2026)