Samsung Leads the Pack with Groundbreaking HBM4E AI Memory Chips
Samsung Electronics made a groundbreaking announcement on May 29, 2026. The tech giant has commenced the shipment of its innovative 12-layer HBM4E (High Bandwidth Memory 4E) chips to key customers across the globe. This makes Samsung the pioneer in distributing next-generation AI memory products. This news sparked a surge in Samsung shares, which rose by up to 6.51% in early trading.
The HBM4E chips boast of impressive speeds, reaching up to 16 gigabits per second. The memory bandwidth peaks at 3.6 terabytes per second per stack. This represents a performance improvement of over 20% compared to Samsung’s HBM4 products. The chips also feature a 48GB capacity in a 12-layer configuration. This marks an increase of more than 30% from the previous generation. Additionally, the chips offer 16% better power efficiency and improved thermal performance.
These chips are built using Samsung’s cutting-edge 6th-generation 10-nanometer-class DRAM process and Samsung Foundry’s 4nm logic base die. The HBM4E chips will cater to AI giants including Nvidia, AMD, and Google. This launch comes merely three months after Samsung initiated mass production of HBM4. This highlights the company’s aggressive strategy to fortify its position in the rapidly expanding AI memory market. Currently, Samsung holds a 22% market share, competing against SK Hynix’s 57%.
Sources: CNBC | Samsung Newsroom