Revolutionary Magnetic Material Paves the Way for Advanced AI Memory
Researchers in Japan have confirmed that ultra-thin films of ruthenium dioxide exhibit altermagnetism, a newly recognized class of magnetic materials. This breakthrough, published on December 26, 2025, could revolutionize AI memory technology by addressing critical limitations in current memory devices and paving the way for faster, denser data storage essential for artificial intelligence applications.
An international research team from Japan’s National Institute for Materials Science (NIMS), the University of Tokyo, Kyoto Institute of Technology, and Tohoku University demonstrated that ruthenium dioxide (RuO2) thin films represent the third fundamental category of magnetic materials. This category is distinct from conventional ferromagnets and antiferromagnets. Altermagnets combine the best properties of both: they’re stable against magnetic interference while allowing fast electrical readout – an ideal combination for next-generation memory devices.
Current ferromagnetic materials used in memory are vulnerable to interference from stray magnetic fields, causing errors and limiting storage density. The research team found that carefully controlling the crystal orientation of RuO2 films is key to revealing their altermagnetic properties. Their findings, published in Nature Communications, strongly support the potential for developing high-speed, high-density magnetic memory devices that could contribute to more energy-efficient AI processing.
Source: ScienceDaily